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FODM291D - Phototransistor Optocoupler

This page provides the datasheet information for the FODM291D, a member of the FODM291 Phototransistor Optocoupler family.

Features

  • Current Transfer Ratio Ranges from 80 to 600% at IF = 5 mA, VCE = 5 V, TA = 25°C.
  • FODM291A.
  • 80 to 160%.
  • FODM291B.
  • 130 to 260%.
  • FODM291C.
  • 200 to 400%.
  • FODM291D.
  • 300 to 600%.
  • Safety and Regulatory Approvals:.
  • UL1577, 3750 VACRMS for 1 min.
  • DIN EN/IEC60747.
  • 5.
  • 5, 565 V Peak Working Insulation Voltage (Pending).
  • Applicable to Infrared Ray Reflow, 260°C Typical Applicati.

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Datasheet preview – FODM291D

Datasheet Details

Part number FODM291D
Manufacturer ON Semiconductor
File Size 502.32 KB
Description Phototransistor Optocoupler
Datasheet download datasheet FODM291D Datasheet
Additional preview pages of the FODM291D datasheet.

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Other Datasheets by ON Semiconductor
  • FODM291 - Phototransistor Optocoupler
  • FODM291A - Phototransistor Optocoupler
  • FODM291B - Phototransistor Optocoupler
  • FODM291C - Phototransistor Optocoupler
  • FODM214 - Phototransistor Optocoupler
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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package FODM291 Series The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm.
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