HGT1S12N60A4DS Datasheet | onsemi

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices bining the best Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The much lower on- state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335. The diode used in anti- parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction...