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HGT1S12N60A4DS - N-Channel IGBT

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ON Semiconductor

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HGT1S12N60A4DS N-Channel IGBT by ON Semiconductor - Datasheet Preview — Datasheet preview – HGT1S12N60A4DS

Datasheet Details

Part number	HGT1S12N60A4DS
Manufacturer	ON Semiconductor
File Size	580.48 KB
Description	N-Channel IGBT
Datasheet	HGT1S12N60A4DS Datasheet
Note	This datasheet PDF includes multiple part numbers: HGT1S12N60A4DS, HGTG12N60A4D. Please refer to the document for exact specifications by model.
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Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The much lower on.
state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335. The diode used in anti.
parallel is the development type TA49371. This IGBT is ideal for many high voltage switching.

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Published: Apr 13, 2020 |