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HGT1S12N60A4DS Datasheet N-channel IGBT

Manufacturer: onsemi

Overview: SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices bining the.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on.
  • state conduction loss of a bipolar transistor. The much lower on.
  • state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335. The diode used in anti.
  • parallel is the development type TA49371. This IGBT is ideal for many high voltage switching.

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