HGT1S12N60A4DS - N-Channel IGBT

This page provides the datasheet information for the HGT1S12N60A4DS, a member of the HGTG12N60A4D N-Channel IGBT family.

Product Overview

ON Semiconductor

Part number	HGT1S12N60A4DS
Manufacturer	ON Semiconductor
File Size	580.48 KB
Description	N-Channel IGBT
Datasheet	HGT1S12N60A4DS Datasheet
Additional preview pages of the HGT1S12N60A4DS datasheet.

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The much lower on.
state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335. The diode used in anti.
parallel is the development type TA49371. This IGBT is ideal for many high voltage switching.

Other Datasheets by ON Semiconductor

Published: Apr 13, 2020 |