| Part Number | HGT1S12N60A4DS Datasheet |
|---|---|
| Manufacturer | Intersil |
| Overview | HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 File Number 4697.3 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N6. of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49335. The diode used . |
HGT1S12N60A4DS Datasheet and Specifications PDF
The HGT1S12N60A4DS is a N-Channel IGBT.
| Part Number | HGT1S12N60A4DS Datasheet |
|---|---|
| Description | N-Channel IGBT |
| Manufacturer | onsemi |
| Overview |
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching de.
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on *state conduction loss of a bipolar transistor. The much lower on *state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335. The diode used . |
| Part Number | HGT1S12N60A4DS Datasheet |
|---|---|
| Description | N-Channel IGBT |
| Manufacturer | Fairchild Semiconductor |
| Overview | HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated. of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode used. |