Datasheet Details
| Part number | HGTG10N120BND |
|---|---|
| Manufacturer | onsemi |
| File Size | 436.10 KB |
| Description | N-Channel IGBT |
| Datasheet | HGTG10N120BND-ONSemiconductor.pdf |
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Overview: NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35 A, 1200 V HGTG10N120BND The HGTG10N120BND is a Non−Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family.
| Part number | HGTG10N120BND |
|---|---|
| Manufacturer | onsemi |
| File Size | 436.10 KB |
| Description | N-Channel IGBT |
| Datasheet | HGTG10N120BND-ONSemiconductor.pdf |
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Symbol HGTG10N120BND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 35 A IC110 17 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C (Figure 2) Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C ICM VGES VGEM SSOA PD 80 ±20 ±30 55 A at 1200 V 298 2.38 A V V W W/°C Operating and Storage Junction T
Compare HGTG10N120BND distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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HGTG10N120BND | N-Channel IGBT | Fairchild Semiconductor |
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HGTG10N120BND | N-Channel IGBT | Intersil Corporation |
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HGTG10N120BN | 35A/ 1200V/ NPT Series N-Channel IGBT | Fairchild Semiconductor |
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HGTG10N120BN | N-Channel IGBT | Intersil Corporation |
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