HGTG10N120BND Description
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Pulse width limited by maximum junction temperature. VCE(PK) = 840 V, TJ = 125°C, RG = 10.
HGTG10N120BND is N-Channel IGBT manufactured by onsemi.
| Manufacturer | Part Number | Description |
|---|---|---|
| HGTG10N120BND | N-Channel IGBT | |
Intersil |
HGTG10N120BND | N-Channel IGBT |
| HGTG10N120BN | 35A/ 1200V/ NPT Series N-Channel IGBT | |
Intersil |
HGTG10N120BN | N-Channel IGBT |
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Pulse width limited by maximum junction temperature. VCE(PK) = 840 V, TJ = 125°C, RG = 10.