Description
Symbol
HGTG10N120BND
Units
Collector to Emitter Voltage
Collector Current Continuous At TC = 25°C At TC = 110°C
BVCES
1200
V
IC25
35
A
IC110
17
A
Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 15
Features
- of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on.
- state conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching.
HGTG10N120BND Datasheet
