HGTG10N120BND Datasheet (onsemi)

Part HGTG10N120BND
Description N-Channel IGBT
Manufacturer onsemi
Size 436.10 KB
Pricing from 2.425 USD, available from Verical and Rochester Electronics.
onsemi

HGTG10N120BND Overview

Key Specifications

Package: TO-247-3
Mount Type: Through Hole
Pins: 3
Height: 24.75 mm

Description

Symbol HGTG10N120BND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 35 A IC110 17 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C (Figure 2) Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C ICM VGES VGEM SSOA PD 80 ±20 ±30 55 A at 1200 V 298 2.38 A V V W W.

Key Features

  • 35 A, 1200 V, TC = 25°C
  • 1200 V Switching SOA Capability
  • Typical Fall Time: 140 ns at TJ = 150°C
  • Short Circuit Rating
  • Low Conduction Loss

Price & Availability

Seller Inventory Price Breaks Buy
Verical 345 155+ : 2.425 USD
500+ : 2.3 USD
1000+ : 2.1625 USD
10000+ : 2.0375 USD
View Offer
Verical 590 155+ : 2.425 USD
500+ : 2.3 USD
1000+ : 2.1625 USD
10000+ : 2.0375 USD
View Offer