HGTG10N120BND Overview
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Pulse width limited by maximum junction temperature. VCE(PK) = 840 V, TJ = 125°C, RG = 10.
| Part number | HGTG10N120BND |
|---|---|
| Datasheet | HGTG10N120BND-ONSemiconductor.pdf |
| File Size | 436.10 KB |
| Manufacturer | onsemi |
| Description | N-Channel IGBT |
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If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Pulse width limited by maximum junction temperature. VCE(PK) = 840 V, TJ = 125°C, RG = 10.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| HGTG10N120BND | N-Channel IGBT | Fairchild Semiconductor | |
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HGTG10N120BND | N-Channel IGBT | Intersil Corporation |
| HGTG10N120BN | 35A/ 1200V/ NPT Series N-Channel IGBT | Fairchild Semiconductor | |
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HGTG10N120BN | N-Channel IGBT | Intersil Corporation |
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