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KSP13 - NPN Epitaxial Silicon Darlington Transistor

Datasheet Summary

Description

TO

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

  • Collector.
  • Emitter Voltage: VCES=30 V.
  • Collector Power Dissipation: PC (max)=625 mW.
  • These are Pb.
  • Free Devices.

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Datasheet Details

Part number KSP13
Manufacturer ON Semiconductor
File Size 192.44 KB
Description NPN Epitaxial Silicon Darlington Transistor
Datasheet download datasheet KSP13 Datasheet
Additional preview pages of the KSP13 datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com NPN Epitaxial Silicon Darlington Transistor KSP13 Features • Collector−Emitter Voltage: VCES=30 V • Collector Power Dissipation: PC (max)=625 mW • These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO VCES Collector−Base Voltage Collector−Emitter Voltage 30 V 30 V VEBO Emitter−Base Voltage 10 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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