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DATA SHEET www.onsemi.com
NPN Epitaxial Silicon Transistor
KSP44, KSP45
Features
• High−Voltage Transistor • Collector−Emitter Voltage:
♦ KSP44: VCEO = 400 V ♦ KSP45: VCEO = 350 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO Collector−Base Voltage
KSP44
500
V
KSP45
400
VCEO Collector−Emitter Voltage
KSP44
400
V
KSP45
350
VEBO Emitter−Base Voltage
6
V
IC
Collector Current
300
mA
TJ
Junction Temperature
150
°C
TSTG Storage Temperature
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.