MBRAF2H100T3G Datasheet | onsemi

MBRAF2H100 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where pact size and weight are critical to the system. Features - Low Profile Package for Space Constrained Applications - Rectangular Package for Automated Handling - Highly Stable Oxide Passivated Junction - 150°C Operating Junction Temperature - Guard- Ring for Stress Protection - These are Pb-...