MBRAF3200 Datasheet | onsemi

Surface Mount Schottky Power Rectifier MBRAF3200, NRVBAF3200 This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where pact size and weight are critical to the system. Features - Small pact Surface Mountable Package with J- Bend Leads - Rectangular Package for Automated Handling - Highly Stable Oxide Passivated Junction - Very High Blocking Voltage - 200 V - 150°C Operating Junction...