MBRF2060CT Overview
MBRF2060CT Preferred Device SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry.
MBRF2060CT Key Features
- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop
- Matched Dual Die Construction
- High Junction Temperature Capability
- High dv/dt Capability
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guardring for Stress Protection
- Epoxy Meets UL94, VO at 1/8″
- Electrically Isolated. No Isolation Hardware Required
- UL Recognized File #E69369 (Note 1.)
