MCH3007 - RF Transistor

onsemi

Key Features

Low-noise use : NF=1.2dB typ (f=1GHz).
High cut-off frequency : fT=8GHz typ (VCE=5V).
High gain : |S21e|2=12dB typ (f=1GHz).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 12 2 30 350 150 --55 to.

MCH3007 rf transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	MCH3007
Manufacturer	onsemi
File Size	292.30 KB
Description	RF Transistor
Datasheet	MCH3007 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1925A MCH3007 RF Transistor 12V, 30mA, fT=8GHz, NPN Single MCPH3 http://onsemi.com Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=8GHz typ (VCE=5V) • High gain : |S21e|2=12dB typ (f=1GHz) • Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 12 2 30 350 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.