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MCH3375 - Power MOSFET

Key Features

  • On-Resistance RDS(on)1=227mΩ (typ).
  • 4V Drive.
  • High Speed Switching and Low Loss.
  • Pb-Free, Halogen Free and RoHS Compliance VDSS.
  • 30V RDS(on) Max 295mΩ@.
  • 10V 523mΩ@.
  • 4.5V 609mΩ@.
  • 4V ID Max.
  • 1.6A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS.
  • 30 V Gate to Source Voltage Drain Current (DC) VGSS ID ±20.
  • 1.6 V A Drain Current (Pu.

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Datasheet Details

Part number MCH3375
Manufacturer onsemi
File Size 446.79 KB
Description Power MOSFET
Datasheet download datasheet MCH3375 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MCH3375 Power MOSFET –30V, 295mΩ, –1.6A, Single P-Channel www.onsemi.com Features • On-Resistance RDS(on)1=227mΩ (typ) • 4V Drive • High Speed Switching and Low Loss • Pb-Free, Halogen Free and RoHS Compliance VDSS –30V RDS(on) Max 295mΩ@ –10V 523mΩ@ –4.5V 609mΩ@ –4V ID Max –1.6A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS –30 V Gate to Source Voltage Drain Current (DC) VGSS ID ±20 –1.6 V A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP –6.4 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) Junction Temperature PD Tj 0.8 W 150 °C Storage Temperature Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling.