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MCH3376 - Power MOSFET

Key Features

  • ESD diode-Protected gate.
  • High speed switching and Low loss.
  • Pb-free and RoHS Compliance.
  • Drive at low voltage:1.8V drive.
  • Low RDS(on) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on cerami.

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Datasheet Details

Part number MCH3376
Manufacturer onsemi
File Size 487.15 KB
Description Power MOSFET
Datasheet download datasheet MCH3376 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1564B MCH3376 Power MOSFET –20V, 241mΩ, –1.5A, Single P-Channel http://onsemi.com Features • ESD diode-Protected gate • High speed switching and Low loss • Pb-free and RoHS Compliance • Drive at low voltage:1.8V drive • Low RDS(on) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --20 ±10 --1.5 --6 0.8 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.