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MCH3377 - P-Channel Power MOSFET

Key Features

  • Ultrahigh-spees switching.
  • Halogen free compliance.
  • 1.8V drive.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --20 ±10 --3 --12.

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Datasheet Details

Part number MCH3377
Manufacturer onsemi
File Size 503.43 KB
Description P-Channel Power MOSFET
Datasheet download datasheet MCH3377 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0957B MCH3377 P-Channel Power MOSFET –20V, –3A, 83mΩ, Single MCPH3 http://onsemi.com Features • Ultrahigh-spees switching. • Halogen free compliance • 1.8V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --20 ±10 --3 --12 1 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.