MCH5839 Datasheet PDF (Power MOSFET) | Download ON Semiconductor MCH5839

MCH5839 - Power MOSFET

Features

Composite type with a P-Channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.
Pb-Free, Halogen Free and RoHS compliance [MOSFET].
Low On-resistance .
ESD Diode-Protected Gate.
1.8V drive [SBD].
Short reverse recovery time.
Low forward voltage Typical.

Datasheet Details

Part number	MCH5839
Manufacturer	ON Semiconductor
File Size	672.83 KB
Description	Power MOSFET
Datasheet	MCH5839 Datasheet
Additional preview pages of the MCH5839 datasheet.

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Full PDF Text Transcription

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MCH5839 Power MOSFET –20V, 266mΩ, –1.5A, Single P-Channel with Schottky Diode MCH5839 is a P-Channel Power MOSFET, with Schottky Diode for general-purpose switching device applications. Features  Composite type with a P-Channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting  Pb-Free, Halogen Free and RoHS compliance [MOSFET]  Low On-resistance   ESD Diode-Protected Gate  1.8V drive [SBD]  Short reverse recovery time  Low forward voltage Typical Applications  DC/DC Converter SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit [MOSFET] Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID 20 V 10 V 1.

Published: Jan 16, 2016 |