MJE243G - Complementary Silicon Power Plastic Transistors

onsemi

Key Features

High Collector.
Emitter Sustaining Voltage.
High DC Current Gain.
Low Collector.
Emitter Saturation Voltage.
High Current Gain Bandwidth Product.
Annular Construction for Low Leakages.
These Devices are Pb.
Free and are RoHS Compliant.

MJE243G complementary silicon power plastic transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	MJE243G
Manufacturer	onsemi
File Size	230.89 KB
Description	Complementary Silicon Power Plastic Transistors
Datasheet	MJE243G Datasheet

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Other Datasheets by onsemi

Part Number	Description
MJE200	Complementary Silicon Power Plastic Transistors
MJE200G	Complementary Silicon Power Plastic Transistors
MJE210	Complementary Silicon Power Plastic Transistors
MJE210G	Complementary Silicon Power Plastic Transistors
MJE253G	Complementary Silicon Power Plastic Transistors

Full PDF Text Transcription (Reference)

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Complementary Silicon Power Plastic Transistors MJE243G (NPN), MJE253G (PNP) These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features  High Collector−Emitter Sustaining Voltage  High DC Current Gain  Low Collector−Emitter Saturation Voltage  High Current Gain Bandwidth Product  Annular Construction for Low Leakages  These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCB VEB IC ICM IB PD 100 Vdc 100 Vdc 7.0 Vdc 4.0 Adc 8.0 Adc 1.