Datasheet Summary
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- NPN, MJE253
- PNP
Preferred Device plementary Silicon Power Plastic Transistors
These devices are designed for low power audio amplifier and low- current, high- speed switching applications.
Features http://onsemi.
- High Collector- Emitter Sustaining Voltage
- - High DC Current Gain @ IC = 200 mAdc
- -
- - hFE = 40- 200 = 40- 120 Low Collector- Emitter Saturation Voltage
- VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product
- fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB Pb- Free Packages are Available- VCEO(sus) = 100 Vdc (Min)
4.0 AMPERES POWER TRANSISTORS PLEMENTARY...
