MJE243 Overview
Key Features
- High Collector-Emitter Sustaining Voltage
- High DC Current Gain @ IC = 200 mAdc
- hFE = 40-200 = 40-120 Low Collector-Emitter Saturation Voltage
- VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product
| Part | MJE243 |
|---|---|
| Description | POWER TRANSISTORS |
| Category | Transistor |
| Manufacturer | onsemi |
| Size | 116.08 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MJE243 | Motorola Semiconductor | 4 AMPERE POWER TRANSISTORS |
| MJE243 | Continental Device India | NPN EPITAXIAL SILICON POWER TRANSISTOR |
| MJE243 | Central Semiconductor | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJE243 | Inchange Semiconductor | Silicon NPN Power Transistor |
| MJE240 | Central Semiconductor | COMPLEMENTARY SILICON POWER TRANSISTORS |