| Part Number | MJE243 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switch. ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
MJE243 Datasheet and Specifications PDF
The MJE243 is a 4 AMPERE POWER TRANSISTORS.
| Part Number | MJE243 Datasheet |
|---|---|
| Description | POWER TRANSISTORS |
| Manufacturer | onsemi |
| Overview |
MJE243 − NPN, MJE253 − PNP
Preferred Device
Complementary Silicon Power Plastic Transistors
These devices are designed for low power audio amplifier and low−current, high−speed s.
* High Collector *Emitter Sustaining Voltage * * High DC Current Gain @ IC = 200 mAdc * * * * hFE = 40 *200 = 40 *120 Low Collector *Emitter Saturation Voltage * VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product * fT = 40 MHz (Min) @ IC = 100 mAdc Annular Co. |
| Part Number | MJE243 Datasheet |
|---|---|
| Description | NPN EPITAXIAL SILICON POWER TRANSISTOR |
| Manufacturer | Continental Device India |
| Overview | Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak Base Current Total Power Dissipation @ Tc=25 ºC Derate Above 25ºC Total Power Dissipation @ Ta=2. . |
| Part Number | MJE243 Datasheet |
|---|---|
| Description | (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . . |