Part MJE243
Description NPN EPITAXIAL SILICON POWER TRANSISTOR
Category Transistor
Manufacturer Continental Device India
Size 148.87 KB
Continental Device India

MJE243 Overview

Description

Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak Base Current Total Power Dissipation @ Tc=25 ºC Derate Above 25ºC Total Power Dissipation @ Ta=25 ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC IB PD PD Tj, Tstg Value 100 100 7.0 4.0 8.0 1.0 15 0.12 1.5 0.012 - 65 to +150 UNIT V V V A A W W/ºC W W/ºC ºC Junction to Ambient Rth(j-c) Rth(j-a) 8.34 ºC/W 83.4 ºC/W DESCRIPTION Collector Emitter Sustaning Voltage Collector Cut off Current SYMBOL VCEO (Sus) I.