• Part: MMBT4124LT1G
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 166.36 KB
Download MMBT4124LT1G Datasheet PDF
onsemi
MMBT4124LT1G
MMBT4124LT1G is NPN Transistor manufactured by onsemi.
Features - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant http://onsemi. COLLECTOR 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 25 30 5.0 200 Unit Vdc Vdc Vdc m Adc 3 Symbol PD Max 225 1.8 556 300 2.4 417 - 55 to +150 Unit W m W/°C °C/W W m W/°C °C/W °C 1 2 SOT- 23 (TO- 236) CASE 318 STYLE 6 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient Junction and Storage Temperature Rq JA PD Rq JA TJ, Tstg MARKING DIAGRAM ZC M G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ZC = Device Code M = Date Code- G = Pb- Free Package (Note: Microdot may be in either location) - Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT4124L T1G Package SOT- 23 (Pb- Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor ponents Industries, LLC, 2009 August, 2009 - Rev. 2 Publication Order Number: MMBT4124LT1/D .. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (Note 3) (IC = 1.0 m Adc, IE = 0) Collector - Base Breakdown Voltage (IC = 10 m Adc, IE = 0) Emitter - Base Breakdown...