MMBT5551M3
MMBT5551M3 is NPN High Voltage Transistor manufactured by onsemi.
Features
- Reduces Board Space
- NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous THERMAL CHARACTERISTICS
VCEO VCBO VEBO
Vdc
Vdc
Vdc
60 m Adc
Characteristic
Symbol Max Unit
Total Device Dissipation
FR- 5 Board (Note 1) TA = 25°C Derate above 25°C
PD m W
265 m W/°C
Thermal Resistance, Junction- to- Ambient (Note 1)
Rq JA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C
640 m W
5.1 m W/°C
Thermal Resistance, Junction- to- Ambient (Note 2)
Rq JA
195 °C/W
Junction and Storage...
