MMBTA43LT1G - High Voltage Transistors

onsemi

Download the MMBTA43LT1G datasheet PDF. This datasheet also covers the MMBTA42LT1G variant, as both devices belong to the same high voltage transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

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MMBTA43LT1G high voltage transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MMBTA42LT1G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MMBTA43LT1G
Manufacturer	onsemi
File Size	98.67 KB
Description	High Voltage Transistors
Datasheet	MMBTA43LT1G Datasheet

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Other Datasheets by onsemi

Part Number	Description
MMBTA43L	High Voltage Transistors
MMBTA42L	High Voltage Transistors
MMBTA42LT1G	High Voltage Transistors
MMBTA05L	Driver Transistors
MMBTA06L	Driver Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Characteristic Symbol Value Unit Collector −Emitter Voltage VCEO Vdc MMBTA42 300 MMBTA43 200 Collector −Base Voltage MMBTA42 MMBTA43 VCBO 300 200 Vdc Emitter −Base Voltage VEBO Vdc MMBTA42 6.0 MMBTA43 6.0 Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic IC 500 Symbol Max mAdc Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.