Datasheet4U Logo Datasheet4U.com

MMBTH10-4L - VHF/UHF Transistor

Download the MMBTH10-4L datasheet PDF. This datasheet also covers the MMBTH10L variant, as both devices belong to the same vhf/uhf transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • S and NSV Prefixes for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMBTH10L_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MMBTH10-4LT1 VHF/UHF Transistor ON
MMBTH10 VHF/UHF TRANSISTOR Motorola
MMBTH10 NPN Epitaxial Planar Transistor SeCoS
MMBTH10 NPN VHF/UHF Transistors MCC
MMBTH10 Silicon Epitaxial Planar Transistor GME

Other Datasheets by onsemi

Part Number Description
MMBTH81 PNP RF Transistor
MMBT2131T1 PNP Transistors
MMBT2131T1G PNP Transistors
MMBT2222AL General Purpose Transistors
MMBT2222AM3T5G NPN General Purpose Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon Features • S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage Emitter-Base Voltage THERMAL CHARACTERISTICS VCBO VEBO 30 Vdc 3.0 Vdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient (Note 1) RθJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.