MOC8106M Description
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package.
MOC8106M Key Features
- High BVCEO: 70 V Minimum
- Closely Matched Current Transfer Ratio (CTR) Minimizes
- Current Transfer Ratio In Select Groups
- Safety and Regulatory Approvals
MOC8106M Applications
- maximum values allowed in the event of a failure