Datasheet Details
| Part number | MOC8106M |
|---|---|
| Manufacturer | onsemi |
| File Size | 367.63 KB |
| Description | Phototransistor Optocouplers |
| Datasheet |
 MOC8106M Datasheet
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General Description
The CNY17XM, CNY17FXM, and MOC8106M devices consist of
a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in
line package.
Key Features
- High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
- Closely Matched Current Transfer Ratio (CTR) Minimizes Unit.
- to.
- Unit Variation.
- Current Transfer Ratio In Select Groups.
- Very Low Coupled Capacitance Along With No Chip.
- to.
- Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M).
- Safety and Regulatory Approvals: UL1577, 4,170 VACRMS for 1 Minute DIN.
- EN/IEC60747.
- 5.
- 5, 850 V Peak Working Ins.