MSD42SWT1 Datasheet | onsemi

.. Preferred Device NPN Silicon General Purpose High Voltage Transistor This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features http://onsemi. COLLECTOR 3 - Pb- Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 300 300 6.0 150 Unit Vdc Vdc Vdc m Adc 1 BASE 2 EMITTER 3 1 2 THERMAL CHARACTERISTICS Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 - 55 to +150 Unit m W °C °C SC- 70 (SOT- 323) CASE 419 STYLE 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC = 1.0 m Adc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 m Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 m Adc, IE = 0) Collector-Base Cutoff Current (VCB = 300 Vdc, IE = 0) Emitter- Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 1.0 m Adc) (VCE = 10 Vdc, IC = 30 m Adc) Collector-Emitter Saturation Voltage (Note 2) (IC = 200 m Adc, IB = 2.0 m Adc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 300 300 6.0 - - Max - - - 0.1 0.1 Unit Vdc Vdc Vdc m A m A - h FE1 h FE2 VCE(sat) 25 40 - 200 - 0.5 Vdc 1 D4 M G G D4 = Device Code M = Date Code- G = Pb- Free Package (Note: Microdot may be in either location) - Date Code orientation may vary depending upon manufacturing location. ORDERING...