Datasheet Details
| Part number | MTD10N10EL |
|---|---|
| Manufacturer | onsemi |
| File Size | 104.99 KB |
| Description | Power Field Effect Transistor DPAK |
| Datasheet | MTD10N10EL_ONSemiconductor.pdf |
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Overview: MTD10N10EL TMOS E−FET™ Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
| Part number | MTD10N10EL |
|---|---|
| Manufacturer | onsemi |
| File Size | 104.99 KB |
| Description | Power Field Effect Transistor DPAK |
| Datasheet | MTD10N10EL_ONSemiconductor.pdf |
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Compare MTD10N10EL distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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