MTD10N10EL - Power Field Effect Transistor DPAK

onsemi

Key Features

VDSS 100 V http://onsemi. com RDS(ON) TYP 0.22 W ID MAX 10 A N.
Channel D.
Avalanche Energy Specified.
Source.
to.
Drain Diode Recovery Time Comparable to a Discrete.
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Pb.
Free Package is Available G S.

MTD10N10EL power field effect transistor dpak by onsemi - Datasheet Preview

Datasheet Details

Part number	MTD10N10EL
Manufacturer	onsemi
File Size	104.99 KB
Description	Power Field Effect Transistor DPAK
Datasheet	MTD10N10EL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MTD10N10EL TMOS E−FET™ Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Features VDSS 100 V http://onsemi.com RDS(ON) TYP 0.