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MTY20N50E - Power MOSFET

Features

  • pacitance Variation 10000 VGS = 0 V 1000 TJ = 25°C Ciss 100 10 10 Coss Crss 100 1000 VDS, DRAIN.
  • TO.
  • SOURCE.

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Full PDF Text Transcription (Reference)

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MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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