• Part: MUN5116DW1T1G
  • Description: Dual PNP Bias Resistor Transistors
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 126.65 KB
Download MUN5116DW1T1G Datasheet PDF
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MUN5116DW1T1G
Features - Simplifies Circuit Design - Reduces Board Space - Reduces ponent Count - S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable - These Devices are Pb-Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (TA = 25C, mon for Q1 and Q2, unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO Vdc Collector-Emitter Voltage VCEO Vdc Collector Current - Continuous IC 100 m Adc Input Forward Voltage VIN(fwd) Vdc Input Reverse Voltage VIN(rev) Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. ORDERING INFORMATION Device Package Shipping† MUN5116DW1T1G, SMUN5116DW1T1G SOT- 363 3,000/Tape &...