NCP5355
Description
1 DRN The switching node mon to the high and low-side FETs.
Key Features
- 8.0 V - 14 V Gate Drive Capability
- 2.0 A Peak Drive Current
- Rise and Fall Times < 15 ns Typical into 3300 pF
- Propagation Delay from Inputs to Outputs < 30 ns
- Adaptive Nonoverlap Time Optimized for Large Power MOSFETs
- Floating Top Driver Acmodates Applications Up to 26 V
- Undervoltage Lockout to Prevent Switching when the Input Voltage is Low
- Thermal Shutdown Protection Against Overtemperature
- TG to DRN Pulldown Resistor Prevents HV Supply-Induced Turn-On of Top MOSFET
- BG to PGND Pulldown Resistor Prevents Transient Turn On of Bottom MOSFET
