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NCV51752 - 4.5-A/9-A Isolated Single Channel Gate Driver

Description

Pin No.

3 GND1 4 VCC 5 OUT 6 GND2 7 VEE 8 I/O Power Input Input Power Power Output Power Power Description Input

side Supply Voltage.

It is recommended to place a bypass capacitor from VDD to GND1.

inverting Logic Input with in

Features

  • Feature Options.
  • VCC UVLO Referenced to GND2.
  • Built.
  • in Negative Bias between GND2 and VEE Pins Selectable Negative Bias Levels via Trim.
  • 3.
  • V to 20.
  • V Input Supply Voltage.
  • Output Supply Voltage from 6.5 V to 30 V with 6.
  • V and 8.
  • V for MOSFET, 12.
  • V and 17.
  • V for SiC, Threshold.
  • 4.5.
  • A Peak Source, 9.
  • A Peak Sink Output Current Capability.
  • Minimum CMTI of 200 V/ns dV/d.

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Datasheet Details

Part number NCV51752
Manufacturer onsemi
File Size 2.09 MB
Description 4.5-A/9-A Isolated Single Channel Gate Driver
Datasheet download datasheet NCV51752 Datasheet

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Full PDF Text Transcription

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3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control NCV51752 The NCV51752 is a family of isolated single−channel gate driver with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs and SiC MOSFET power switches. The NCV51752 offers short and matched propagation delays. For improved reliability, dV/dt immunity and even faster turn−off, the NCV51752 can utilize to generate a negative bias rail. The NCV51752 is available in a 4 mm SOIC−8 package and can support isolation voltage up to 3.75 kVRMS. The NCV51752 offers other important protection function such as independent under−voltage lockout for both−side driver.
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