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NDD60N550U1
N-Channel Power MOSFET 600 V, 550 mW
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD Unit
Drain−to−Source Voltage
VDSS 600 V
Gate−to−Source Voltage
VGS
±25 V
Continuous Drain Current RqJC
Steady
TC =
ID
8.2 A
State
25°C
TC = 100°C
5.2
Power Dissipation – RqJC
Steady State
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (ID = 4 A) Peak Diode Recovery (Note 1)
PD
IDM TJ, TSTG IS EAS
94 W
34 −55 to +150
8.
NDD60N550U1 Datasheet
