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NDD60N900U1
N-Channel Power MOSFET 600 V, 900 mW
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS 600 V
Gate−to−Source Voltage
VGS ±25 V
Continuous Drain Current RqJC
Steady State
TC = 25°C TC = 100°C
ID
5.7 A 3.6
Power Dissipation Steady
– RqJC
State
TC = 25°C
PD
74 W
Pulsed Drain Current
tp = 10 ms
IDM 20 A
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (ID = 2 A) Peak Diode Recovery (Note 1)
TTSJT,G IS
EAS
−55 to +150 5.
NDD60N900U1 Datasheet
