NGTB20N120IHWG - IGBT

Features

a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching.

ON Semiconductor

Datasheet Details

Part number	NGTB20N120IHWG
Manufacturer	ON Semiconductor
File Size	107.12 KB
Description	IGBT
Datasheet	NGTB20N120IHWG Datasheet
Additional preview pages of the NGTB20N120IHWG datasheet.

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Full PDF Text Transcription

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NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on−state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

Published: Nov 19, 2018 |