NGTB20N120LWG - IGBT

Features

a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching.

ON Semiconductor

Datasheet Details

Part number	NGTB20N120LWG
Manufacturer	ON Semiconductor
File Size	238.72 KB
Description	IGBT
Datasheet	NGTB20N120LWG Datasheet
Additional preview pages of the NGTB20N120LWG datasheet.

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Full PDF Text Transcription

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NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. Features http://onsemi.

Published: May 26, 2013 |