NGTB20N135IHRWG
NGTB20N135IHRWG is IGBT manufactured by onsemi.
IGBT with Monolithic Free Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on- state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
Features
- Extremely Efficient Trench with Fieldstop Technology
- 1350 V Breakdown Voltage
- Optimized for Low Losses in IH Cooker Application
- Reliable and Cost Effective Single Die Solution
- These are Pb- Free Devices
Typical Applications
- Inductive Heating
- Consumer Appliances
- Soft Switching
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