NGTB25N120FLWG Datasheet | onsemi

NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co- packaged free wheeling diode with a low forward voltage. Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation 10 ms Short Circuit Capability Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb- Free Devices http://onsemi. Features - - - - - - 25 A, 1200 V...