NGTB25N120FLWG - IGBT

Features

a robust and cost effective Trench construction, and provides superior performance in demanding switching.

ON Semiconductor

Datasheet Details

Part number	NGTB25N120FLWG
Manufacturer	ON Semiconductor
File Size	250.06 KB
Description	IGBT
Datasheet	NGTB25N120FLWG Datasheet
Additional preview pages of the NGTB25N120FLWG datasheet.

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Full PDF Text Transcription

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NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation 10 ms Short Circuit Capability Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices http://onsemi.com Features • • • • • • 25 A, 1200 V VCEsat = 2.0 V Eoff = 0.

Published: May 26, 2013 |