NGTB25N120LWG Datasheet | onsemi

NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on- state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co- packaged free wheeling diode with a low forward voltage. Features http://onsemi. - - - - - - - - - Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge 5 ms Short- Circuit Capability These are Pb- Free Devices Inverter Welding...