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NGTB75N65FL2WG - IGBT

Features

  • a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching.

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Full PDF Text Transcription

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IGBT NGTB75N65FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
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