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NGTB03N60R2DT4G - IGBT

Key Features

  • Reverse Conducting II IGBT.
  • IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V].
  • IGBT tf=75ns (typ).
  • Diode VF=1.5V (typ) [IF=3A].
  • Diode trr=65ns (typ).
  • 5s Short Circuit Capability.

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NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V]  IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=3A] Diode trr=65ns (typ) 5s Short Circuit Capability Applications  General Purpose Inverter Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax @Tc=25C *2 @Tc=100C *2 Collector Current (Peak) Pulse width Llimited by Tjmax Diode Average Output Current Power Dissipation Tc=25C (Our ideal heat dissipation condition) *2 Junction Temperature Storage Temperature Symbol VCES VGES IC *1 ICP IO PD Tj Tstg Value 600 20 9 4.5 12 4.