Download NGTB05N60R2DT4G Datasheet PDF
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NGTB05N60R2DT4G Key Features

  • Reverse Conducting II IGBT
  • IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V]
  • IGBT tf=95ns (typ) -Diode VF=1.5V (typ) [IF=5A] -Diode trr=70ns (typ) -5s Short Circuit Capability

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NGTB05N60R2DT4G Description

NGTB05N60R2DT4G IGBT 600V, 8A, N-Channel .onsemi.