NGTB05N60R2DT4G - IGBT

onsemi

Key Features

Reverse Conducting II IGBT.
IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V].
IGBT tf=95ns (typ).
Diode VF=1.5V (typ) [IF=5A].
Diode trr=70ns (typ).
5s Short Circuit Capability.

NGTB05N60R2DT4G igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	NGTB05N60R2DT4G
Manufacturer	onsemi
File Size	576.53 KB
Description	IGBT
Datasheet	NGTB05N60R2DT4G Datasheet

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Full PDF Text Transcription (Reference)

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NGTB05N60R2DT4G IGBT 600V, 8A, N-Channel www.onsemi.com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V]  IGBT tf=95ns (typ) Diode VF=1.