NGTB05N60R2DT4G Overview
NGTB05N60R2DT4G IGBT 600V, 8A, N-Channel .onsemi.
NGTB05N60R2DT4G Key Features
- Reverse Conducting II IGBT
- IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V]
- IGBT tf=95ns (typ) -Diode VF=1.5V (typ) [IF=5A] -Diode trr=70ns (typ) -5s Short Circuit Capability