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NRVBD1035CTL Datasheet Schottky Power Rectifier

Manufacturer: onsemi

Overview: NRVBD1035CTL Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The NRVBD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode.

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Features.
  • Highly Stable Oxide Passivated Junction.
  • Guardring for Stress Protection.
  • Matched Dual Die Construction.
  • May be Paralleled for High Current Output.
  • High dv/dt Capability.
  • Short Heat Sink Tap Manufactured.
  • Not Sheared.
  • Ve.

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