NRVBD1035CTL Description
NRVBD1035CTL Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The NRVBD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry.
NRVBD1035CTL Key Features
- Highly Stable Oxide Passivated Junction
- Guardring for Stress Protection
- Matched Dual Die Construction
- May be Paralleled for High Current Output
- High dv/dt Capability
- Short Heat Sink Tap Manufactured
- Not Sheared
- Very Low Forward Voltage Drop
- This is a Pb-Free Device
- Case: Epoxy, Molded