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NRVBD1035CTL - Schottky Power Rectifier

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Features.
  • Highly Stable Oxide Passivated Junction.
  • Guardring for Stress Protection.
  • Matched Dual Die Construction.
  • May be Paralleled for High Current Output.
  • High dv/dt Capability.
  • Short Heat Sink Tap Manufactured.
  • Not Sheared.
  • Ve.

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Datasheet preview – NRVBD1035CTL

Datasheet Details

Part number NRVBD1035CTL
Manufacturer ON Semiconductor
File Size 260.17 KB
Description Schottky Power Rectifier
Datasheet download datasheet NRVBD1035CTL Datasheet
Additional preview pages of the NRVBD1035CTL datasheet.

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Full PDF Text Transcription

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NRVBD1035CTL Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The NRVBD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Features • Highly Stable Oxide Passivated Junction • Guardring for Stress Protection • Matched Dual Die Construction − May be Paralleled for High Current Output • High dv/dt Capability • Short Heat Sink Tap Manufactured − Not Sheared • Very Low Forward Voltage Drop • Epoxy Meets UL 94 V−0 @ 0.
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