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NRVBD1035VCTL - Switch-mode Schottky Power Rectifier

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Features.
  • Highly Stable Oxide Passivated Junction.
  • Guardring for Stress Protection.
  • Matched Dual Die Construction.
  • May be Paralleled for High Current Output.
  • High dv/dt Capability.
  • Short Heat Sink Tap Manufactured.
  • Not Sheared.
  • Ve.

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Datasheet preview – NRVBD1035VCTL

Datasheet Details

Part number NRVBD1035VCTL
Manufacturer ON Semiconductor
File Size 238.09 KB
Description Switch-mode Schottky Power Rectifier
Datasheet download datasheet NRVBD1035VCTL Datasheet
Additional preview pages of the NRVBD1035VCTL datasheet.

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Full PDF Text Transcription

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Schottky Power Rectifier, Switch Mode, 10 A, 35 V MBRD1035CTL, NRVBD1035VCTL, SBRD81035CTL Series The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Features • Highly Stable Oxide Passivated Junction • Guardring for Stress Protection • Matched Dual Die Construction − May be Paralleled for High Current Output • High dv/dt Capability • Short Heat Sink Tap Manufactured − Not Sheared • Very Low Forward Voltage Drop • Epoxy Meets UL 94 V−0 @ 0.
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