NSS30100LT1G Datasheet | onsemi

.. NSS30100LT1G 30 V, 2 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 Power Edge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC- DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, puters, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2Power Edge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal ponents in analog amplifiers. http://onsemi. 30 VOLTS 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 200 m W COLLECTOR 3 1 BASE 2 EMITTER - This is a Pb- Free Device MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max - 30 - 50 - 5.0 - 1.0 - 2.0 Unit Vdc Vdc Vdc A A 3 1 2 SOT- 23 (TO- 236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range Symbol PD (Note 1) Max 310 2.5 RθJA (Note 1) PD (Note 2) 403 710 5.7 RθJA (Note 2) PDsingle (Note 3) TJ, Tstg 176 575 - 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W m W °C DEVICE MARKING VS4 VS4 = Specific Device Code ORDERING INFORMATION Device NSS30100LT1G Package SOT- 23 (Pb- Free) Shipping†...