NSS30201MR6T1G Datasheet | onsemi

.. NSS30201MR6T1G 30 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 Power Edge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC- DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, puters, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2Power Edge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal ponents in analog amplifiers. http://onsemi. 30 VOLTS 3.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 m W COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER - This is a Pb- Free Device MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max 30 50 5.0 2.0 3.0 Unit V V V A A 4 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient Thermal Resistance, Junction- to- Lead #1 Total Device Dissipation (Single Pulse < 10 s) Junction and Storage Temperature Range Symbol PD (Note 1) Max 535 4.3 Rq JA (Note 1) PD (Note 2) 234 1.180 9.4 Rq JA (Note 2) Rq JL (Note 1) Rq JL (Note 2) PDsingle (Notes 2 and 3) TJ, Tstg 106 110 50 1.75 - 55 to +150 Unit m W m W/°C °C/W W m W/°C °C/W °C/W °C/W W °C TSOP- 6 CASE 318G STYLE 6 DEVICE MARKING VS7M VS7 = Specific...