NSS35200MR6T1G Datasheet | onsemi

.. NSS35200MR6T1G 35 V, 5 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 Power Edge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC- DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, puters, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2Power Edge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal ponents in analog amplifiers. http://onsemi. 35 VOLTS 5.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 m W COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER - This is a Pb- Free Device MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max - 35 - 55 - 5.0 - 2.0 - 5.0 Unit Vdc Vdc Vdc Adc A 4 3 HBM Class 3 MM Class C TSOP- 6 CASE 318G STYLE 6 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. DEVICE MARKING VS8M VS8 = Specific Device Code M = Date Code ORDERING INFORMATION Device NSS35200MR6T1G Package Shipping † TSOP- 6 3000/Tape & Reel (Pb- Free) †For information on tape and reel specifications,...