NSVBAT54HT1G Datasheet | onsemi

BAT54H Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features - Extremely Fast Switching Speed - Low Forward Voltage - 0.35 V (Typ) @ IF = 10 m Adc - Device Marking: JV - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant- MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (Note 1) TA = 25°C Derate above 25°C Forward Current (DC) Non- Repetitive Peak Forward Current, tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% Thermal Resistance Junction- to- Ambient Junction and Storage Temperature Range 1. FR- 4 Minimum Pad Symbol PD IF IFSM IFRM Rq JA TJ, Tstg Max 200 1.57 200 Max - 55 to150 Unit m W m W/°C m A m A m A °C/W...