NSVBAT54SWT1G
NSVBAT54SWT1G is Dual Series Schottky Barrier Diodes manufactured by onsemi.
BAT54SWT1G, NSVBAT54SWT1G
Dual Series Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Features
- Extremely Fast Switching Speed
- Low Forward Voltage
- 0.35 Volts (Typ) @ IF = 10 m Adc
- AEC Qualified and PPAP Capable
- NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant-
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage Forward Power Dissipation
@ TA = 25C Derate above 25C
VR 30
PF 200 m W 1.6 m W/C
Forward Current (DC) Non- Repetitive Peak Forward Current tp < 10 msec Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
IF IFSM
IFRM
200 Max 600 300 m A m A m A
Junction Temperature
- 55 to 125 C
Storage Temperature Range
Tstg
- 55 to +150...