NTBG040N120M3S Overview
Key Features
- Typ. RDS(on) = 40 mW @ VGS = 18 V
- Low Switching Losses
- 100% Avalanche Tested
- This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |