NTBG040N120M3S Description
Silicon Carbide (SiC) MOSFET 40 mohm, 1200 V, M3S, D2PAK-7L Product Preview NTBG040N120M3S.
NTBG040N120M3S Key Features
- Typ. RDS(on) = 40 mW @ VGS = 18 V
- Low Switching Losses
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with exemption 7a