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NTBG040N120M3S - SiC MOSFET

Key Features

  • Typ. RDS(on) = 40 mW @ VGS = 18 V.
  • Low Switching Losses.
  • 100% Avalanche Tested.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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Full PDF Text Transcription (Reference)

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M3S, D2PAK-7L Product Preview NTBG040N120M3S Features • Typ.