Part NTBG040N120SC1
Description SiC MOSFET
Category MOSFET
Manufacturer onsemi
Size 325.92 KB
onsemi

NTBG040N120SC1 Overview

Key Features

  • Typ. RDS(on) = 40 mW
  • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)
  • Low Effective Output Capacitance (Typ. Coss = 139 pF)
  • 100% Avalanche Tested
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)