NTBG040N120SC1 Description
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60 A Drain (TAB).
NTBG040N120SC1 Key Features
- Typ. RDS(on) = 40 mW
- Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)
- Low Effective Output Capacitance (Typ. Coss = 139 pF)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and RoHS pliant with exemption 7a