Datasheet4U Logo Datasheet4U.com

NTBG040N120SC1 - SiC MOSFET

Key Features

  • Typ. RDS(on) = 40 mW.
  • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC).
  • Low Effective Output Capacitance (Typ. Coss = 139 pF).
  • 100% Avalanche Tested.
  • TJ = 175°C.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTB0101 Dual supply translating transceiver NXP
NTB0101A Auto direction sensing dual supply NXP
NTB0102 Dual supply translating transceiver NXP
NTB0102-Q100 Dual supply translating transceiver NXP
NTB0104 Dual supply translating transceiver NXP

Other Datasheets by onsemi

Part Number Description
NTBG040N120M3S SiC MOSFET
NTBG045N065SC1 SiC MOSFET
NTBG014N120M3P SiC MOSFET
NTBG015N065SC1 SiC MOSFET
NTBG020N090SC1 SiC MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60 A Drain (TAB) NTBG040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ.