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NTF6P02T3 Power MOSFET −6.0 Amps, −20 Volts
P−Channel SOT−223
Features http://onsemi.com
• • • • •
Low RDS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified Pb−Free Package is Available
−6.0 AMPERES −20 VOLTS RDS(on) = 44 mW (Typ.)
P−Channel D
Typical Applications
• Power Management in Portables and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Gate−to−Source Voltage Drain Current (Note 1) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Symbol VDSS VGS ID ID Value −20 ±8.0 −10 −8.4 −35 8.
NTF6P02T3 Datasheet
