• Part: NTHL080N120SC1
  • Manufacturer: onsemi
  • Size: 356.92 KB
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NTHL080N120SC1 Description

Silicon Carbide (SiC) MOSFET EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L NTHL080N120SC1.

NTHL080N120SC1 Key Features

  • Typ. RDS(on) = 80 mW
  • Ultra Low Gate Charge (typ. QG(tot) = 56 nC)
  • Low Effective Output Capacitance (typ. Coss = 80 pF)
  • 100% UIL Tested
  • This Device is Halide Free and RoHS pliant with exemption 7a