NTHL080N120SC1
NTHL080N120SC1 is 1200V SiC MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 80 m W
- Ultra Low Gate Charge (typ. QG(tot) = 56 n C)
- Low Effective Output Capacitance (typ. Coss = 80 p F)
- 100% UIL Tested
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- UPS
- DC- DC Converter
- Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- to- Source Voltage
TC < 175°C
VDSS
- 15/+25 V
VGSop
- 5/+20 V
Continuous Drain Current Rq JC
Steady TC = 25°C
State
Power Dissipation Rq JC
Continuous Drain Current Rq JC
Steady TC = 100°C
State
Power Dissipation Rq JC
Pulsed Drain Current (Note 2)
TA = 25°C
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