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NTHL080N120SC1 - N-Channel MOSFET

Description

that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Features

  • 1200 V @ TJ = 175°C.
  • Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A.
  • High Speed Switching with Low Capacitance.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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NTHL080N120SC1 MOSFET – Power, N-Channel, Silicon Carbide, TO-247-3L 1200 V, 80 mW Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. Features • 1200 V @ TJ = 175°C • Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A • High Speed Switching with Low Capacitance • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Industrial Motor Drive • UPS • Boost Inverter • PV Charger www.onsemi.
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