NTHL080N120SC1 Overview
Silicon Carbide (SiC) MOSFET EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L NTHL080N120SC1.
NTHL080N120SC1 Key Features
- Typ. RDS(on) = 80 mW
- Ultra Low Gate Charge (typ. QG(tot) = 56 nC)
- Low Effective Output Capacitance (typ. Coss = 80 pF)
- 100% UIL Tested
- This Device is Halide Free and RoHS pliant with exemption 7a